TDDB of Sensitive High-K Gate Dielectrics – Revisited for CDM

Time-dependent dielectric breakdown (TDDB) of High-K material is investigated comprehensively by TLP. Cumulative stress effects are eliminated by the TDDB power-law. Promising improvements in the ESD design window for pulses at 1ns are quantified including statistical scattering. With CDM waveforms at gates even substantially below 1ns, CDM design may be eased. Precise design limits can be defined.

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Publication Details

Published
2024-09-16
DOI
https://doi.org/10.23919/eos/esd61719.2024.10702124
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.21
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article

TDDB of Sensitive High-K Gate Dielectrics – Revisited for CDM

Patrick Huff, Adrien Ille, Kai Esmark, Anton Boehm et al.
1 citations
Semiconductor materials and devices
0.21
article

TDDB of Sensitive High-K Gate Dielectrics – Revisited for CDM

Patrick Huff, Adrien Ille, Kai Esmark, Anton Boehm, Mirko Scholz, Gernot Langguth, Christian Russ
article en
1 citations

Abstract

Time-dependent dielectric breakdown (TDDB) of High-K material is investigated comprehensively by TLP. Cumulative stress effects are eliminated by the TDDB power-law. Promising improvements in the ESD design window for pulses at 1ns are quantified including statistical scattering. With CDM waveforms at gates even substantially below 1ns, CDM design may be eased. Precise design limits can be defined.

Infineon Technologies (Germany) (DE)
Affordable and clean energy
Openalex Percentile: Top 47%
Semiconductor materials and devices
0.21
DOISourceOpenAlex
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TDDB of Sensitive High-K Gate Dielectrics – Revisited for CDM — Patrick Huff, Adrien Ille, et al. · (2024) | TGRS Research Map | TGRS