Research on the Influence of Internal Parameters of SiC MOSFET on EMI of Traction Inverter

Silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is the third-generation power semiconductor, which is crucial to improve the efficiency of traction system. Its fast-switching speed and high voltage level make it an ideal power device. However, the high switching frequency of SiC MOSFET may lead to overvoltage and high frequency oscillation at the traction motor end, causing electromagnetic interference (EMI) problems. Current research often ignores the switching characteristics of SiC devices, and it is difficult to accurately evaluate the EMI interference level in the system. Therefore, in the traction system using SiC MOSFET, it is necessary to study the modeling of SiC MOSFET devices in depth to understand the influence of changes in parasitic parameters inside the device on the switching characteristics, and further analyze the electromagnetic interference problems that this change may cause to the system. By studying the influence of the internal parasitic parameters of SiC MOSFET devices on the switching characteristics in detail, the system design can be better optimized, the risk of electromagnetic interference can be reduced, and the stability and reliability of the system can be improved. This research will provide important guidance for the future application of SiC power devices in traction systems and promote the further improvement of system performance.