Accuracy Preserving Extensions to a PDK MOSFET Model for ESD Simulation

This work demonstrates a Verilog-A model that may be interconnected to a PDK MOSFET model; the composite model is valid at ESD current levels while retaining the accuracy of the PDK model for ac, dc, and transient simulation at current levels reflective of normal operating conditions. The model’s accuracy under ESD conditions is verified by comparing simulation results to TLP and VF-TLP measurement data.

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Publication Details

Published
2024-09-16
DOI
https://doi.org/10.23919/eos/esd61719.2024.10702120
Citations
1
Primary Topic
Electrostatic Discharge in Electronics
Type
article
Field-Weighted Citation Impact
0.21
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article

Accuracy Preserving Extensions to a PDK MOSFET Model for ESD Simulation

Elyse Rosenbaum, Yujie Zhou
1 citations
Electrostatic Discharge in Electronics
0.21
article

Accuracy Preserving Extensions to a PDK MOSFET Model for ESD Simulation

Elyse Rosenbaum, Yujie Zhou
article en
1 citations

Abstract

This work demonstrates a Verilog-A model that may be interconnected to a PDK MOSFET model; the composite model is valid at ESD current levels while retaining the accuracy of the PDK model for ac, dc, and transient simulation at current levels reflective of normal operating conditions. The model’s accuracy under ESD conditions is verified by comparing simulation results to TLP and VF-TLP measurement data.

University of Illinois Urbana-Champaign (US)
Openalex Percentile: Top 47%
Electrostatic Discharge in Electronics
0.21
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Accuracy Preserving Extensions to a PDK MOSFET Model for ESD Simulation — Elyse Rosenbaum, Yujie Zhou · (2024) | TGRS Research Map | TGRS