Accuracy Preserving Extensions to a PDK MOSFET Model for ESD Simulation
This work demonstrates a Verilog-A model that may be interconnected to a PDK MOSFET model; the composite model is valid at ESD current levels while retaining the accuracy of the PDK model for ac, dc, and transient simulation at current levels reflective of normal operating conditions. The model’s accuracy under ESD conditions is verified by comparing simulation results to TLP and VF-TLP measurement data.
Authors
- Elyse Rosenbaum (ORCID: https://orcid.org/0000-0002-3919-9833)
- Yujie Zhou (ORCID: https://orcid.org/0009-0000-9231-9534)
Institutions
- University of Illinois Urbana-Champaign (US)
Publication Details
- Published
- 2024-09-16
- DOI
- https://doi.org/10.23919/eos/esd61719.2024.10702120
- Citations
- 1
- Primary Topic
- Electrostatic Discharge in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.21