Design of X-Band GaN Power Amplifier for SAR Applications

Synthetic Aperture Radar (SAR) is a imaging technique used to obtain high-resolution images by utilizing the principle of radar waves reflecting off surfaces. SAR designs operating at X -band frequencies are preferred for detailed and high-resolution imaging, as this frequency range allows radar waves to reflect smaller details from objects, resulting in more precise images. Power amplifier design is crucial in SAR applications because power amplifiers are used to amplify radar signals and cover wider areas. GaN transistors are preferred in power amplifier design for SAR applications due to their advantages such as high power, efficiency, frequency performance, durability, and high-temperature tolerance [1–4].