High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts

In this work, we proposed and demonstrated etch-stopper-layer (ESL) structured indium-gallium-zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with hybrid Ohmic/Schottky contacts utilizing single-layer Cu source/drain (S/D) electrodes. In this unique yet simple configuration, the AlOx layer deposited on the IGZO layer serves not only as a protection layer for the IGZO channel during S/D electrode etching but also as an interfacial layer for modulating the Schottky barrier of the Cu/IGZO contact. This, combined with quasi-Ohmic contact of Cu/IGZO, enables the formation of hybrid contacts based on a single-layer Cu electrode. The ESL-structured SBTFTs with hybrid contacts show a two-order magnitude increase in saturation current (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula>) compared to SBTFTs solely based on Schottky contacts, with high intrinsic gains exceeding 1500 at a gate voltage of 10 V, and good stability under gate bias and illumination stress. Utilizing technology computer-aided design (TCAD) simulation, the operation of ESL-structured IGZO SBTFTs was fully elucidated. Also, this study conducted a thorough investigation and analysis of the influence of source-drain gaps and Schottky contact lengths at the source on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula> and saturation voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {dsat}}$ </tex-math></inline-formula>) for the devices. This work provides a promising route to fabricate low-cost metal oxide SBTFTs with significantly increased <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula>.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2024-10-08
DOI
https://doi.org/10.1109/ted.2024.3469165
Citations
7
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
1.46

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article

High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts

Zheng Gong, Biao Tang, Shenghan Zou, Yuzhi Li et al.
7 citations
IEEE Transactions on Electron Devices
Thin-Film Transistor Technologies
1.46
article

High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts

Zheng Gong, Biao Tang, Shenghan Zou, Yuzhi Li, Guangshuo Cai, Linfeng Lan
article en
7 citations

Abstract

In this work, we proposed and demonstrated etch-stopper-layer (ESL) structured indium-gallium-zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with hybrid Ohmic/Schottky contacts utilizing single-layer Cu source/drain (S/D) electrodes. In this unique yet simple configuration, the AlOx layer deposited on the IGZO layer serves not only as a protection layer for the IGZO channel during S/D electrode etching but also as an interfacial layer for modulating the Schottky barrier of the Cu/IGZO contact. This, combined with quasi-Ohmic contact of Cu/IGZO, enables the formation of hybrid contacts based on a single-layer Cu electrode. The ESL-structured SBTFTs with hybrid contacts show a two-order magnitude increase in saturation current (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula>) compared to SBTFTs solely based on Schottky contacts, with high intrinsic gains exceeding 1500 at a gate voltage of 10 V, and good stability under gate bias and illumination stress. Utilizing technology computer-aided design (TCAD) simulation, the operation of ESL-structured IGZO SBTFTs was fully elucidated. Also, this study conducted a thorough investigation and analysis of the influence of source-drain gaps and Schottky contact lengths at the source on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula> and saturation voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {dsat}}$ </tex-math></inline-formula>) for the devices. This work provides a promising route to fabricate low-cost metal oxide SBTFTs with significantly increased <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula>.

IEEE Transactions on Electron DevicesVol. 71(11)
South China Normal University (CN), Guangdong Academy of Sciences (CN), Guangdong Polytechnic Normal University (CN), Institute of Semiconductors (CN), South China University of Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 17%
Thin-Film Transistor Technologies
1.46
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