High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts
In this work, we proposed and demonstrated etch-stopper-layer (ESL) structured indium-gallium-zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with hybrid Ohmic/Schottky contacts utilizing single-layer Cu source/drain (S/D) electrodes. In this unique yet simple configuration, the AlOx layer deposited on the IGZO layer serves not only as a protection layer for the IGZO channel during S/D electrode etching but also as an interfacial layer for modulating the Schottky barrier of the Cu/IGZO contact. This, combined with quasi-Ohmic contact of Cu/IGZO, enables the formation of hybrid contacts based on a single-layer Cu electrode. The ESL-structured SBTFTs with hybrid contacts show a two-order magnitude increase in saturation current (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula>) compared to SBTFTs solely based on Schottky contacts, with high intrinsic gains exceeding 1500 at a gate voltage of 10 V, and good stability under gate bias and illumination stress. Utilizing technology computer-aided design (TCAD) simulation, the operation of ESL-structured IGZO SBTFTs was fully elucidated. Also, this study conducted a thorough investigation and analysis of the influence of source-drain gaps and Schottky contact lengths at the source on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula> and saturation voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {dsat}}$ </tex-math></inline-formula>) for the devices. This work provides a promising route to fabricate low-cost metal oxide SBTFTs with significantly increased <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {dsat}}$ </tex-math></inline-formula>.
Authors
- Zheng Gong (ORCID: https://orcid.org/0000-0001-6651-5582)
- Biao Tang (ORCID: https://orcid.org/0000-0002-5838-7485)
- Shenghan Zou (ORCID: https://orcid.org/0000-0002-0471-1729)
- Yuzhi Li (ORCID: https://orcid.org/0000-0001-7689-3771)
- Guangshuo Cai (ORCID: https://orcid.org/0000-0002-3975-3777)
- Linfeng Lan
Institutions
- South China Normal University (CN)
- Guangdong Academy of Sciences (CN)
- Guangdong Polytechnic Normal University (CN)
- Institute of Semiconductors (CN)
- South China University of Technology (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-10-08
- DOI
- https://doi.org/10.1109/ted.2024.3469165
- Citations
- 7
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China
- Basic and Applied Basic Research Foundation of Guangdong Province