Circuit modeling of Metasurfaces with Printed Elements

Metasurfaces are the 2D version of metamaterials technology and are designed as planar periodic structures with unit cell size of less than $0.1 \lambda$. The metamaterials can be characterized by the homogenization method as surfaces with effective tensor electric ($3 \times 3$ matrix) and magnetic ($3 \times 3$ matrix) susceptibilities. In case of metasurfaces with printed elements and arbitrary geometry (our case study) the metasurface can be represented by a tensor shunt admittance ($2 \times 2$ matrix) at the interface between two transmission lines representing the two media on the two sides of the metasurface. The tensor shunt admittance can be extracted based on the boundary conditions at the location of the metasurface elements. As such the tensor shunt admittance depends on the metasurface geometry and the media on the two sides of the metasurface. In the literature, we can find two fundamental methods to extract the tensor shunt admittance. In the first method, the extraction is based on the analysis of the unit cell scattering parameters, while in the second method the extraction is based on the analysis of the sampled near field on top of the unit cell metasurface element. The scattering parameters analysis is performed for the dominant Floquet mode in the metasurface unit cell using two orthogonal polarization measurements or simulations. The circuit modeling holds for a relatively narrow incident angular sector around the normal to the metasurface plane. For larger incident angles on the metasurface the shunt admittance model fails due to diffraction and spatial dispersion effects from the metasurface elements. To improve the model performance beyond 50° incident angle there are two options. The $1^{\text {st }}$ option is to recalibrate the model based on measurements or simulations taken at 50° and compute a new tensor shunt admittance based on the data measured at 50°. The $2^{\text {nd }}$ option is to modify the model of the shunt admittance and a more complex circuit modeling is required to represent the metasurface positioned at the interface between two different media. The circuit modeling of the metasurface accelerates the design cycle of a multilayer metasurface structure like radomes and flat lenses instead of the analysis based on a volumetric problem with an effective refractive index.

Authors

Institutions

Publication Details

Published
2024-09-02
DOI
https://doi.org/10.1109/iceaa61917.2024.10701627
Primary Topic
Advanced Antenna and Metasurface Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Circuit modeling of Metasurfaces with Printed Elements

Reut Shavit, Yarden Tzabari
1 links
Advanced Antenna and Metasurface Technologies
article

Circuit modeling of Metasurfaces with Printed Elements

Reut Shavit, Yarden Tzabari
article en

Abstract

Metasurfaces are the 2D version of metamaterials technology and are designed as planar periodic structures with unit cell size of less than $0.1 \lambda$. The metamaterials can be characterized by the homogenization method as surfaces with effective tensor electric ($3 \times 3$ matrix) and magnetic ($3 \times 3$ matrix) susceptibilities. In case of metasurfaces with printed elements and arbitrary geometry (our case study) the metasurface can be represented by a tensor shunt admittance ($2 \times 2$ matrix) at the interface between two transmission lines representing the two media on the two sides of the metasurface. The tensor shunt admittance can be extracted based on the boundary conditions at the location of the metasurface elements. As such the tensor shunt admittance depends on the metasurface geometry and the media on the two sides of the metasurface. In the literature, we can find two fundamental methods to extract the tensor shunt admittance. In the first method, the extraction is based on the analysis of the unit cell scattering parameters, while in the second method the extraction is based on the analysis of the sampled near field on top of the unit cell metasurface element. The scattering parameters analysis is performed for the dominant Floquet mode in the metasurface unit cell using two orthogonal polarization measurements or simulations. The circuit modeling holds for a relatively narrow incident angular sector around the normal to the metasurface plane. For larger incident angles on the metasurface the shunt admittance model fails due to diffraction and spatial dispersion effects from the metasurface elements. To improve the model performance beyond 50° incident angle there are two options. The $1^{\text {st }}$ option is to recalibrate the model based on measurements or simulations taken at 50° and compute a new tensor shunt admittance based on the data measured at 50°. The $2^{\text {nd }}$ option is to modify the model of the shunt admittance and a more complex circuit modeling is required to represent the metasurface positioned at the interface between two different media. The circuit modeling of the metasurface accelerates the design cycle of a multilayer metasurface structure like radomes and flat lenses instead of the analysis based on a volumetric problem with an effective refractive index.

Ben-Gurion University of the Negev (IL)
Openalex Percentile: Top 73%
Advanced Antenna and Metasurface Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.