Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs
This work investigates HBM performance in GaN-on-SiC RF HEMTs. Forward and reverse G-S Schottky diodes are evaluated in RF multi-finger HEMTs with different widths and using inside or outside through-substrate vias (TSVs). HBM zaps on D-S HEMTs are conducted. Finally, benchmarks with GaN-on-Si HEMTs are proposed in terms of G-S Schottky diodes and D-S HEMTs.
Authors
- Shih‐Hung Chen (ORCID: https://orcid.org/0000-0002-6481-2951)
- Nadine Collaert (ORCID: https://orcid.org/0000-0002-8062-3165)
- Weimin Wu (ORCID: https://orcid.org/0000-0002-8390-6785)
- Dongyang Yan (ORCID: https://orcid.org/0000-0001-6598-7705)
- Bertrand Parvais (ORCID: https://orcid.org/0000-0003-0769-7069)
Institutions
- IMEC (BE)
Publication Details
- Published
- 2024-09-16
- DOI
- https://doi.org/10.23919/eos/esd61719.2024.10702150
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00