On-Chip ESD Protection for Multi-Gbps Automotive Serial IO in a 16-nm FinFET Process

This work presents an on-chip ESD protection architecture for high-speed automotive SerDes receivers. The ESD protection, composed of primary, secondary and auxiliary clamps, is designed to withstand system-level ESD stress. The primary protection is provided by a bidirectional SCR that can sink 15 A of 100-ns TLP current. Impedance matching and bandwidth extension are achieved by integrating the ESD protection with a T-coil circuit.

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Publication Details

Published
2024-09-16
DOI
https://doi.org/10.23919/eos/esd61719.2024.10702100
Citations
4
Primary Topic
Electrostatic Discharge in Electronics
Type
article
Field-Weighted Citation Impact
0.83
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article

On-Chip ESD Protection for Multi-Gbps Automotive Serial IO in a 16-nm FinFET Process

Elyse Rosenbaum, Shudong Huang, Srivatsan Parthasarathy, Yuanzhong Zhou et al.
4 citations
Electrostatic Discharge in Electronics
0.83
article

On-Chip ESD Protection for Multi-Gbps Automotive Serial IO in a 16-nm FinFET Process

Elyse Rosenbaum, Shudong Huang, Srivatsan Parthasarathy, Yuanzhong Zhou, Jean-Jacques Hajjar
article en
4 citations

Abstract

This work presents an on-chip ESD protection architecture for high-speed automotive SerDes receivers. The ESD protection, composed of primary, secondary and auxiliary clamps, is designed to withstand system-level ESD stress. The primary protection is provided by a bidirectional SCR that can sink 15 A of 100-ns TLP current. Impedance matching and bandwidth extension are achieved by integrating the ESD protection with a T-coil circuit.

Analog Devices (United States) (US), University of Illinois Urbana-Champaign (US)
Affordable and clean energy
Openalex Percentile: Top 26%
Electrostatic Discharge in Electronics
0.83
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