Single Event Latch-up (SEL) Rate Prediction Methodology in Bulk FinFET Technology

A single event latch-up (SEL) rate prediction methodology for CMOS logics is proposed. The SEL failure rates at varied operating voltage and temperature can be predicted via the extraction of design and process parameters. The proposed methodology is implemented in bulk FinFET technology, and the prediction shows high consistency with experimental results within 90% statistical confidence. SEL impact analysis is realized by decoupling design- and process-related factors to enable SEL design-technology cooptimization (DTCO).

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Publication Details

Published
2024-09-16
DOI
https://doi.org/10.23919/eos/esd61719.2024.10702151
Citations
3
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.63
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article

Single Event Latch-up (SEL) Rate Prediction Methodology in Bulk FinFET Technology

Tzu-Hao Chiang, Jam-Wem Lee, Kuo-Ji Chen, Ming-Hsiang Song et al.
3 citations
Advancements in Semiconductor Devices and Circuit Design
0.63
article

Single Event Latch-up (SEL) Rate Prediction Methodology in Bulk FinFET Technology

Tzu-Hao Chiang, Jam-Wem Lee, Kuo-Ji Chen, Ming-Hsiang Song, Wun-Jie Lin, Chien-Yao Huang
article en
3 citations

Abstract

A single event latch-up (SEL) rate prediction methodology for CMOS logics is proposed. The SEL failure rates at varied operating voltage and temperature can be predicted via the extraction of design and process parameters. The proposed methodology is implemented in bulk FinFET technology, and the prediction shows high consistency with experimental results within 90% statistical confidence. SEL impact analysis is realized by decoupling design- and process-related factors to enable SEL design-technology cooptimization (DTCO).

Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Openalex Percentile: Top 31%
Advancements in Semiconductor Devices and Circuit Design
0.63
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