Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET
A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula>) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula>. The high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> and lack of tunability limit and hinder various applications utilizing STL. In this study, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> was achieved solely through electrical modulation.
Authors
- Seong‐Yun Yun (ORCID: https://orcid.org/0000-0003-4988-1120)
- Seung-Il Kim (ORCID: https://orcid.org/0009-0003-9951-1088)
- Ji‐Man Yu
- Joon‐Kyu Han (ORCID: https://orcid.org/0000-0002-8736-9091)
- Joon-Ha Son
- Sangwon Lee (ORCID: https://orcid.org/0000-0002-6322-8331)
- Yang-Kyu Choi
Institutions
- Sogang University (KR)
- Korea Advanced Institute of Science and Technology (KR)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-10-08
- DOI
- https://doi.org/10.1109/ted.2024.3469181
- Citations
- 6
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.25