Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET

A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula>) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula>. The high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> and lack of tunability limit and hinder various applications utilizing STL. In this study, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> was achieved solely through electrical modulation.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2024-10-08
DOI
https://doi.org/10.1109/ted.2024.3469181
Citations
6
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
1.25
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article

Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET

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6 citations
IEEE Transactions on Electron Devices
Advancements in Semiconductor Devices and Circuit Design
1.25
article

Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET

Seong‐Yun Yun, Seung-Il Kim, Ji‐Man Yu, Joon‐Kyu Han, Joon-Ha Son, Sangwon Lee, Yang-Kyu Choi
article en
6 citations

Abstract

A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula>) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula>. The high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> and lack of tunability limit and hinder various applications utilizing STL. In this study, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {LU}}$ </tex-math></inline-formula> was achieved solely through electrical modulation.

IEEE Transactions on Electron DevicesVol. 71(11)
Sogang University (KR), Korea Advanced Institute of Science and Technology (KR)
Affordable and clean energy
Openalex Percentile: Top 20%
Advancements in Semiconductor Devices and Circuit Design
1.25
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