A SiGe/Si Heterojunction Phototransistor for High Sensitivity Light Detection

Silicon-based heterojunction phototransistors (HPTs) with their advantages of high internal gain, high responsivity, and compatibility with CMOS processes have attracted much attention in high-sensitivity light detection. In this article, the SiGe/Si HPT with an illuminated area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$50\times 50~\mu $ </tex-math></inline-formula>m2 for high responsivity and sensitivity was designed and fabricated. The optical responsivity of the fabricated SiGe/Si HPT reached 1.717 and 12.379 A/W for 405 and 650 nm, their specific detectivity values were <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.54\times 10^{{10}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$11.16\times 10^{{10}}~\text {cm}\cdot \text {Hz}^{{0.5}}\cdot \text {W}^{-{1}}$ </tex-math></inline-formula>, respectively. An analytic model was developed to discuss current amplification for different wavelengths when considering absorption efficiency and carrier transportation. The emitter thickness was optimized as 60 nm to significantly improve the current amplification under short wavelengths. The achieved optical responsivity of the optimized SiGe/Si HPT for 405 and 650 nm respectively were 13.756 and 13.904 A/W, and the specific detectivity were <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$12.41\times 10^{{10}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$12.54\times 10^{{10}}~\text {cm}\cdot \text {Hz}^{{0.5}} \cdot \text {W}^{-{1}}$ </tex-math></inline-formula>.

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Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2024-10-08
DOI
https://doi.org/10.1109/ted.2024.3467218
Citations
1
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
0.21

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article

A SiGe/Si Heterojunction Phototransistor for High Sensitivity Light Detection

Weicong Na, Wanrong Zhang, Hongyun Xie, Yunpeng Ge et al.
1 citations
IEEE Transactions on Electron Devices
CCD and CMOS Imaging Sensors
0.21
article

A SiGe/Si Heterojunction Phototransistor for High Sensitivity Light Detection

Weicong Na, Wanrong Zhang, Hongyun Xie, Yunpeng Ge, Dongyue Jin, Ziming Liu, Yudong Ma, Xiaoting Shen, Zimai Xu
article en
1 citations

Abstract

Silicon-based heterojunction phototransistors (HPTs) with their advantages of high internal gain, high responsivity, and compatibility with CMOS processes have attracted much attention in high-sensitivity light detection. In this article, the SiGe/Si HPT with an illuminated area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$50\times 50~\mu $ </tex-math></inline-formula>m2 for high responsivity and sensitivity was designed and fabricated. The optical responsivity of the fabricated SiGe/Si HPT reached 1.717 and 12.379 A/W for 405 and 650 nm, their specific detectivity values were <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.54\times 10^{{10}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$11.16\times 10^{{10}}~\text {cm}\cdot \text {Hz}^{{0.5}}\cdot \text {W}^{-{1}}$ </tex-math></inline-formula>, respectively. An analytic model was developed to discuss current amplification for different wavelengths when considering absorption efficiency and carrier transportation. The emitter thickness was optimized as 60 nm to significantly improve the current amplification under short wavelengths. The achieved optical responsivity of the optimized SiGe/Si HPT for 405 and 650 nm respectively were 13.756 and 13.904 A/W, and the specific detectivity were <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$12.41\times 10^{{10}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$12.54\times 10^{{10}}~\text {cm}\cdot \text {Hz}^{{0.5}} \cdot \text {W}^{-{1}}$ </tex-math></inline-formula>.

IEEE Transactions on Electron DevicesVol. 71(11)
Beijing University of Technology (CN)
National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Beijing Municipal Natural Science Foundation
Affordable and clean energy
Openalex Percentile: Top 47%
CCD and CMOS Imaging Sensors
0.21
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