Low-symmetry layered semiconductor In2Te5 for promising polarization-sensitive photodetector
Low-symmetry two-dimensional (2D) materials have attracted significant attention for polarization-sensitive photodetection due to the optoelectronic anisotropy. Here, we demonstrated the strong in-plane anisotropy of In2Te5 through electron density distribution calculations based on density functional theory and developed a polarization-sensitive photodetector. The photodetector shows a responsivity of 171.16 mA/W and a response time of 0.42 s under visible light illumination. Additionally, it presents a polarization-sensitive photoresponse with a dichroic ratio of 1.34. Our work reveals the anisotropic optoelectronic properties of In2Te5, potentially stimulating research interest in Group III-VI 2D materials (Pentatelluride M2Te5, M = Al, Ga, In, etc.).
Authors
- Jiaxin Cheng (ORCID: https://orcid.org/0000-0002-6130-9330)
- Yuehua Peng (ORCID: https://orcid.org/0000-0002-5484-9830)
- Hanyang Zhang (ORCID: https://orcid.org/0000-0002-6945-2959)
- Ziran Liu (ORCID: https://orcid.org/0000-0002-8980-7374)
- Dongsheng Tang (ORCID: https://orcid.org/0000-0003-0804-983X)
- Weichang Zhou (ORCID: https://orcid.org/0000-0003-3140-5951)
- Yanling Yin (ORCID: https://orcid.org/0000-0002-8095-6541)
- Weike Wang (ORCID: https://orcid.org/0000-0001-5267-2712)
- Pufan Deng
- Guohao Yuan
Institutions
- Hunan Normal University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-10-07
- DOI
- https://doi.org/10.1063/5.0230193
- Citations
- 3
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.35
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Hunan Province
- Scientific Research Foundation of Hunan Provincial Education Department