Epitaxial growth and band offsets of <b> <i>β</i> </b>-(Sc<i>x</i>Ga1<b>−</b> <i>x</i>)2O3 thin films grown on (100) <b> <i>β</i> </b>-Ga2O3 substrate
β-(ScxGa1−x)2O3 (x = 0–0.36) thin films were epitaxially grown on (100) β-Ga2O3 substrates by oxygen-radical-assisted pulsed-laser deposition. β-(ScxGa1−x)2O3 epilayers were coherently strained up to x = 0.30, although the presence of a structural disorder was implied when x &gt; 0.2. The bandgap energies measured by reflection electron energy loss spectroscopy increased from 4.56 to 5.25 eV with increasing Sc content. In β-(ScxGa1−x)2O3 epilayers, a slightly negative bandgap bowing behavior with a bowing parameter of −0.4 eV was observed, resulting in a larger bandgap increase than in β-(AlxGa1−x)2O3 epilayers with identical x. X-ray photoemission spectroscopy measurement revealed that the valence-band and conduction-band offsets of β-(Sc0.17Ga0.83)2O3 epilayer with respect to β-Ga2O3 were 0.0 and 0.3 eV, respectively.
Authors
- Takuto Soma (ORCID: https://orcid.org/0000-0001-8685-9606)
- Hiroshi Kumigashira (ORCID: https://orcid.org/0000-0003-4668-2695)
- Akira Ohtomo (ORCID: https://orcid.org/0000-0003-0300-4712)
- Kazuki Koreishi (ORCID: https://orcid.org/0009-0000-1580-8262)
Institutions
- Tokyo Institute of Technology (JP)
- High Energy Accelerator Research Organization (JP)
- Tohoku University (JP)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-10-07
- DOI
- https://doi.org/10.1063/5.0226675
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.12
Funders
- Japan Society for the Promotion of Science London
- High Energy Accelerator Research Organization
- Japan Science and Technology Agency