Electronic Passivation of Crystalline Silicon Surfaces Using Spatial‐Atomic‐Layer‐Deposited HfO<sub>2</sub> Films and HfO<sub>2</sub>/SiN<sub><i>x</i></sub> Stacks

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Publication Details

Journal
physica status solidi (RRL) - Rapid Research Letters
Published
2024-10-07
DOI
https://doi.org/10.1002/pssr.202400255
Citations
3
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.63

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article

Electronic Passivation of Crystalline Silicon Surfaces Using Spatial‐Atomic‐Layer‐Deposited HfO2 Films and HfO2/SiNx Stacks

F.M.M. Souren, Jan Schmidt, Michael Winter, Hindrik de Vries et al.
3 citations
physica status solidi (RRL) - Rapid Research Letters
Semiconductor materials and devices
0.63
article

Electronic Passivation of Crystalline Silicon Surfaces Using Spatial‐Atomic‐Layer‐Deposited HfO2 Films and HfO2/SiNx Stacks

F.M.M. Souren, Jan Schmidt, Michael Winter, Hindrik de Vries, Jons Bolding
article en
3 citations

Abstract

No abstract available for this paper.
physica status solidi (RRL) - Rapid Research LettersVol. 19(2)
Leibniz University Hannover (DE), Institut für Solarenergieforschung (DE)
Niedersächsische Ministerium für Wissenschaft und Kultur, Institute of Gender and Health
Affordable and clean energy
Openalex Percentile: Top 31%
Semiconductor materials and devices
0.63
DOIOpen Access PDFOpenAlex
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Electronic Passivation of Crystalline Silicon Surfaces Using Spatial‐Atomic‐Layer‐Deposited HfO<sub>2</sub> Films and HfO<sub>2</sub>/SiN<sub><i>x</i></sub> Stacks — F.M.M. Souren, Jan Schmidt, et al. · physica status solidi (RRL) - Rapid Research Letters (2024) | TGRS Research Map | TGRS