Inverted All-Inorganic Nanorod-Based Light-Emitting Diodes via Electrophoretic Deposition

High performance and high stability in all-inorganic solution processed nanocrystal-based light-emitting diodes (LEDs) are highly attractive for large area devices compared to organic material-based LEDs. In this work, an inverted all-inorganic LED structure is designed to have an easy integration with thin-film transistors. Adopting robust inorganic materials such as Ni<sub>1-<i>x</i></sub> O nanoparticle films as a hole transport layer (HTL) is beneficial for the performance of LED. Herein, we have optimized the HTL by introducing Mg into Ni<sub>1-<i>x</i></sub> O to bridge the difference in energy offset between the nanorod emissive layer and the HTL, in addition to the advantages of low temperature solubility of Ni<sub>1-<i>x</i></sub> O:Mg nanoparticles. Furthermore, CdSe/CdS-based nanorods via electrophoretic deposition (EPD) are amassed in a vertically aligned (VA-NR) fashion as an emissive layer to facilitate the carrier transportation. Fostering these approaches enabled an EQE of 1.2% of the fabricated device, establishing the viability for further development of efficient and highly stable nanocrystal-based LEDs.

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Publication Details

Journal
ACS Applied Nano Materials
Published
2024-10-07
DOI
https://doi.org/10.1021/acsanm.4c03891
Citations
3
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
0.35

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article

Inverted All-Inorganic Nanorod-Based Light-Emitting Diodes via Electrophoretic Deposition

Pai Liu, Devika Laishram, Mei‐Yan Gao, Christophe Silien et al.
3 citations
ACS Applied Nano Materials
Quantum Dots Synthesis And Properties
0.35
article

Inverted All-Inorganic Nanorod-Based Light-Emitting Diodes via Electrophoretic Deposition

Pai Liu, Devika Laishram, Mei‐Yan Gao, Christophe Silien, Kevin M. Ryan, Xiao Wei Sun, Ning Liu, Zhenhui Ma, Tewfik Soulimane, Yongliang Zhang, Lin Lyu, Khizar Hussain Shah, Na Jia
article en
3 citations

Abstract

High performance and high stability in all-inorganic solution processed nanocrystal-based light-emitting diodes (LEDs) are highly attractive for large area devices compared to organic material-based LEDs. In this work, an inverted all-inorganic LED structure is designed to have an easy integration with thin-film transistors. Adopting robust inorganic materials such as Ni<sub>1-<i>x</i></sub> O nanoparticle films as a hole transport layer (HTL) is beneficial for the performance of LED. Herein, we have optimized the HTL by introducing Mg into Ni<sub>1-<i>x</i></sub> O to bridge the difference in energy offset between the nanorod emissive layer and the HTL, in addition to the advantages of low temperature solubility of Ni<sub>1-<i>x</i></sub> O:Mg nanoparticles. Furthermore, CdSe/CdS-based nanorods via electrophoretic deposition (EPD) are amassed in a vertically aligned (VA-NR) fashion as an emissive layer to facilitate the carrier transportation. Fostering these approaches enabled an EQE of 1.2% of the fabricated device, establishing the viability for further development of efficient and highly stable nanocrystal-based LEDs.

ACS Applied Nano MaterialsVol. 7(20)
Beijing Technology and Business University (CN), University of Limerick (IE), Southern University of Science and Technology (CN)
Science Foundation Ireland, University of Limerick, Irish Research Council, Beijing Technology and Business University, Southern University of Science and Technology, Engineering and Physical Sciences Research Council, Bernal Institute, University of Limerick
Openalex Percentile: Top 44%
Quantum Dots Synthesis And Properties
0.35
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