Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon

Interband cascade lasers typically have significantly lower threshold current and power consumption than quantum cascade lasers. They can also have advantages regarding costs and compactness with the photonic integration onto silicon substrates by epitaxial growth. This research introduces a novel examination of the relative intensity noise and the modulation dynamics of a silicon-based Fabry–Perot interband cascade laser emitting at 3.5 μm. The investigation delves into crucial parameters, such as relaxation oscillation frequency, differential gain, gain compression, and K-factor. The resonance patterns identified in relative intensity noise curves can provide essential insights for the thorough characterization of high-defect mid-infrared semiconductor structures intended for high-speed applications. Moreover, this study demonstrates the feasibility of reaching 10 Gbit/s free-space transmission using a silicon-based interband cascade laser in conjunction with an interband cascade infrared photodetector.

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Publication Details

Journal
APL Photonics
Published
2024-10-01
DOI
https://doi.org/10.1063/5.0214252
Citations
3
Primary Topic
Spectroscopy and Laser Applications
Type
article
Field-Weighted Citation Impact
0.72

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article

Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon

Hedwig Knötig, D. A. Díaz-Thomas, Jean‐Baptiste Rodriguez, L. Cerutti et al.
3 citations
APL Photonics
Spectroscopy and Laser Applications
0.72
article

Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon

Hedwig Knötig, D. A. Díaz-Thomas, Jean‐Baptiste Rodriguez, L. Cerutti, Frédéric Grillot, Olivier Spitz, H. Kim, Benedikt Schwarz, Eric Tournié, А. Н. Баранов, Sara Zaminga, Pierre Didier
article en
3 citations

Abstract

Interband cascade lasers typically have significantly lower threshold current and power consumption than quantum cascade lasers. They can also have advantages regarding costs and compactness with the photonic integration onto silicon substrates by epitaxial growth. This research introduces a novel examination of the relative intensity noise and the modulation dynamics of a silicon-based Fabry–Perot interband cascade laser emitting at 3.5 μm. The investigation delves into crucial parameters, such as relaxation oscillation frequency, differential gain, gain compression, and K-factor. The resonance patterns identified in relative intensity noise curves can provide essential insights for the thorough characterization of high-defect mid-infrared semiconductor structures intended for high-speed applications. Moreover, this study demonstrates the feasibility of reaching 10 Gbit/s free-space transmission using a silicon-based interband cascade laser in conjunction with an interband cascade infrared photodetector.

APL PhotonicsVol. 9(10)
University of Central Florida (US), Télécom Paris (FR), Centre National de la Recherche Scientifique (FR), TU Wien (AT), University of New Mexico (US), Université de Montpellier (FR), Early Manuscripts Electronic Library (US), Institut d'Électronique et des Systèmes (FR), Laboratoire Traitement et Communication de l’Information (FR), Université Paris 1 Panthéon-Sorbonne (FR)
European Research Council, European Office of Aerospace Research and Development
Affordable and clean energy
Openalex Percentile: Top 33%
Spectroscopy and Laser Applications
0.72
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