Defect‐Mediated Efficient and Tunable Emission in van der Waals Integrated Light Sources at Room Temperature

Abstract Despite defect‐mediated states in monolayer semiconductors have been considered as efficient emitters in cryogenic conditions, they are severely quenched at room temperature (RT) because of multiple thermal‐induced non‐radiative channels, hindering their practical use. Here, robust and tunable defect‐mediated emissions at RT, designated as D 1 (1.82 eV) and D 2 (1.62 eV), are discovered in monolayer WS 2 through argon plasma treatment, which, via multiple corroborative experiments, are attributed to distinct physical processes: bound excitons associated with sulfur vacancies (Vs) and the band‐to‐acceptor recombination, respectively. Remarkably, the defective sample exhibits over ten‐fold increase in both photoluminescence quantum yield and full‐width at half‐maximum (FWHM) compared to its intrinsic counterpart. Leveraging these pronounced edges, light‐emitting diodes (LEDs) functioning at RT achieve broadband (FWHM: 490 meV) and continuously tunable emission from 1.6 to 2.0 eV, as well as the highest electroluminescence (EL) external quantum efficiency (EQE) of ≈1.39% among transient LEDs based on monolayer semiconductors to date, thereby unveiling a new strategy for emission tailoring at the atomic‐scale limit.

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Publication Details

Journal
Advanced Functional Materials
Published
2024-10-07
DOI
https://doi.org/10.1002/adfm.202414062
Citations
4
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.47

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article

Defect‐Mediated Efficient and Tunable Emission in van der Waals Integrated Light Sources at Room Temperature

Xu Han, Zhenliang Hu, Weiqiao Xia, Qiang Fu et al.
4 citations
Advanced Functional Materials
2D Materials and Applications
0.47
article

Defect‐Mediated Efficient and Tunable Emission in van der Waals Integrated Light Sources at Room Temperature

Xu Han, Zhenliang Hu, Weiqiao Xia, Qiang Fu, Yuan Bo Huang, Zhenhua Ni, Tianqi Liu, Junpeng Lü, Bojian Zhou, Xueyong Yuan, Qi Zhang, Xudong Sun, Xiaoya Liu, Zhexing Duan, Junhao Lin, Shixuan Wang
article en
4 citations

Abstract

Abstract Despite defect‐mediated states in monolayer semiconductors have been considered as efficient emitters in cryogenic conditions, they are severely quenched at room temperature (RT) because of multiple thermal‐induced non‐radiative channels, hindering their practical use. Here, robust and tunable defect‐mediated emissions at RT, designated as D 1 (1.82 eV) and D 2 (1.62 eV), are discovered in monolayer WS 2 through argon plasma treatment, which, via multiple corroborative experiments, are attributed to distinct physical processes: bound excitons associated with sulfur vacancies (Vs) and the band‐to‐acceptor recombination, respectively. Remarkably, the defective sample exhibits over ten‐fold increase in both photoluminescence quantum yield and full‐width at half‐maximum (FWHM) compared to its intrinsic counterpart. Leveraging these pronounced edges, light‐emitting diodes (LEDs) functioning at RT achieve broadband (FWHM: 490 meV) and continuously tunable emission from 1.6 to 2.0 eV, as well as the highest electroluminescence (EL) external quantum efficiency (EQE) of ≈1.39% among transient LEDs based on monolayer semiconductors to date, thereby unveiling a new strategy for emission tailoring at the atomic‐scale limit.

Advanced Functional MaterialsVol. 35(4)
Beijing Institute of Technology (CN), Southern University of Science and Technology (CN), Purple Mountain Laboratories (CN), Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (CN), Southeast University (CN)
Guangdong Innovative and Entrepreneurial Research Team Program, National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Science, Technology and Innovation Commission of Shenzhen Municipality, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 38%
2D Materials and Applications
0.47
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