Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate
In this work, we propose a dual-port cell design to address the pass disturbance in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that (i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-<i>V</i><sub>TH</sub> (HVT) state and the screening of the applied field by the channel at the low-<i>V</i><sub>TH</sub> (LVT) state; (ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; (iii) the proposed design can be incorporated into a highly scaled vertical NAND FeFET string, and the pass gate can be incorporated into the existing three-dimensional (3D) NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.
Authors
- Kijoon Kim (ORCID: https://orcid.org/0000-0003-2689-8376)
- Zhouhang Jiang (ORCID: https://orcid.org/0000-0001-6039-920X)
- Halid Mulaosmanovic (ORCID: https://orcid.org/0000-0001-9524-5112)
- Daewon Ha (ORCID: https://orcid.org/0000-0002-9061-8626)
- Sharadindu Gopal Kirtania (ORCID: https://orcid.org/0000-0002-8162-9155)
- Shan Deng (ORCID: https://orcid.org/0000-0003-1137-8626)
- Steven Soss
- Stefan Duenkel
- Suman Datta (ORCID: https://orcid.org/0000-0001-6044-5173)
- Scott Meninger (ORCID: https://orcid.org/0000-0001-8680-9502)
- Yi Xiao (ORCID: https://orcid.org/0000-0001-5228-9916)
- Zijian Zhao (ORCID: https://orcid.org/0000-0001-5191-6447)
- Shimeng Yu (ORCID: https://orcid.org/0000-0002-0068-3652)
- Dominik Kleimaier (ORCID: https://orcid.org/0000-0002-7235-6554)
- Khandker Akif Aabrar (ORCID: https://orcid.org/0000-0002-3417-2025)
- Wanki Kim
- Suhwan Lim (ORCID: https://orcid.org/0000-0003-3578-5488)
- Sola Woo (ORCID: https://orcid.org/0000-0002-1386-4479)
- Mohamed Mohamed (ORCID: https://orcid.org/0000-0002-3467-4252)
- Rajiv Joshi (ORCID: https://orcid.org/0009-0007-7486-1531)
- Vijaykrishnan Narayanan
- Jongho Woo
- Kai Ni
- Sven Beyer
- Kwangsoo Kim (ORCID: https://orcid.org/0000-0003-0112-1464)
Institutions
- University of Notre Dame (US)
- Georgia Institute of Technology (US)
- Pennsylvania State University (US)
- Samsung (South Korea) (KR)
- IBM Research - Thomas J. Watson Research Center (US)
- MIT Lincoln Laboratory (US)
- GlobalFoundries (Germany) (DE)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2024-10-07
- DOI
- https://doi.org/10.1021/acsami.4c08190
- Citations
- 1
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Bundesministerium für Wirtschaft und Technologie
- Freistaat Sachsen
- Defense Advanced Research Projects Agency
- U.S. Air Force
- Division of Computing and Communication Foundations