Mixed-Field Radiation of 3-D MLC Flash Memories for Space Applications
This article presents the results of dynamic measurements of 3-D multilevel cell (MLC)<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">NAND</small> flash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors in<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">NAND</small> devices are discussed.
Authors
- Iztok Kramberger (ORCID: https://orcid.org/0000-0002-9609-3218)
- Lorenzo Gonzales (ORCID: https://orcid.org/0009-0004-8384-5208)
- S. Fiore (ORCID: https://orcid.org/0000-0001-9933-3961)
- Salvatore Danzeca (ORCID: https://orcid.org/0000-0001-5517-521X)
Institutions
- University of Maribor (SI)
- European Organization for Nuclear Research (CH)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2024-10-07
- DOI
- https://doi.org/10.1109/tns.2024.3474746
- Citations
- 2
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- European Commission
- Javna Agencija za Raziskovalno Dejavnost RS