Investigation of NiSi Contacts on n-Type Gallium Nitride Using Low-Temperature Annealing
Dohyun Kim, Min Choi, Tae Yeon Kim, Il-Gyu Choi, Sung-Jae Chang, Hyun-Wook Jung, Ho-Kyun Ahn, and Hyun Seok Lee. Applied Science and Convergence Technology 2024;33:148-51. https://doi.org/10.5757/ASCT.2024.33.5.148
Authors
- Ilgyu Choi (ORCID: https://orcid.org/0000-0002-5566-3050)
- Dohyun Kim (ORCID: https://orcid.org/0009-0002-7347-7398)
- Hyun‐Wook Jung (ORCID: https://orcid.org/0000-0001-5770-6387)
- Sung‐Jae Chang (ORCID: https://orcid.org/0000-0002-6973-8199)
- Hyun Seok Lee (ORCID: https://orcid.org/0000-0002-6669-5883)
- Tae‐Yeon Kim (ORCID: https://orcid.org/0000-0003-4743-6023)
- Min Choi (ORCID: https://orcid.org/0000-0002-7695-9168)
- Ho‐Kyun Ahn (ORCID: https://orcid.org/0000-0003-3937-8257)
Institutions
- Electronics and Telecommunications Research Institute (KR)
- Chungbuk National University (KR)
Publication Details
- Journal
- Applied Science and Convergence Technology
- Published
- 2024-09-30
- DOI
- https://doi.org/10.5757/asct.2024.33.5.148
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Agency for Defense Development
- Defense Acquisition Program Administration