Impact of Gate and Drain Distance on Device Characteristics in InAlGaN/GaN High Electron Mobility Transistors
Ilgyu Choi∗, Sung-Jae Chang, Dohyun Kim, Jong-Won Lim, Dong-Min Kang, Hyun-Wook Jung, and Ho-Kyun Ahn. Applied Science and Convergence Technology 2024;33:144-7. https://doi.org/10.5757/ASCT.2024.33.5.144
Authors
- Ilgyu Choi (ORCID: https://orcid.org/0000-0002-5566-3050)
- Dohyun Kim (ORCID: https://orcid.org/0009-0002-7347-7398)
- Hyun‐Wook Jung (ORCID: https://orcid.org/0000-0001-5770-6387)
- Sung‐Jae Chang (ORCID: https://orcid.org/0000-0002-6973-8199)
- Dong‐Min Kang
- Ho‐Kyun Ahn (ORCID: https://orcid.org/0000-0003-3937-8257)
- Jong-Won Lim
Institutions
- Electronics and Telecommunications Research Institute (KR)
Publication Details
- Journal
- Applied Science and Convergence Technology
- Published
- 2024-09-30
- DOI
- https://doi.org/10.5757/asct.2024.33.5.144
- Citations
- 6
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.87
Funders
- Agency for Defense Development
- Defense Acquisition Program Administration