Low-temperature growth of CuS thin film on flexible substrates for photodetection

Abstract The covellite phase of copper sulfide thin film (CuS), due to its excellent electronic, optical and chemical properties, has attracted enormous attention in cutting-edge research. This is a comprehensive study of the structural, optical, morphological and electrical properties of CuS thin films deposited by chemical bath deposition technique on flexible polyethylene terephthalate (PET) substrates at different deposition temperatures, i.e. 25 °C, 40 °C, 55 °C and 70 °C for the fabrication of flexible photodetectors. X-ray diffraction and Raman spectral studies reveal the presence of hexagonal covellite phase (CuS), whereas the root mean square (RMS) roughness of CuS thin film increases with an increase in deposition temperature. The optical bandgap of CuS thin film is found to be decreased with an increase in deposition temperature. The optimized CuS thin film, deposited at 70 °C, exhibits a homogeneous surface with RMS roughness of 13.72 nm, mobility of 25.09 cm 2 V −1 s −1 and bandgap of 1.86 eV. The mobility of CuS thin film is found to be increased with the increase in deposition temperature. The flexible CuS photodetector, fabricated at 70 °C, exhibits better photoresponse characteristics, with the highest responsivity of 0.18 mA W −1 , specific detectivity of 1.39 × 10 8 Jones and sensitivity of 173.25 % upon light illumination. The established photocurrent possesses an outstanding dependence on various intensities of illuminated light. Furthermore, the bending test of flexible CuS photodetectors reveals the absence of any sign of deterioration up to bending angle of 30°. This suggests that the Al/CuS-PET/Al photodetector device could be used in various wearable optoelectronic device applications.