Orbital torque switching in perpendicularly magnetized materials

The orbital Hall effect in light materials has attracted considerable attention for developing orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material, i.e., Zr. The orbital torque efficiency of approximately 0.78 is achieved in the Zr orbital Hall material with the perpendicularly magnetized [Co/Pt]<sub>3</sub> sample, which significantly surpasses that of the perpendicularly magnetized CoFeB/Gd/CoFeB sample (approximately 0.04). Such a notable difference is attributed to the different spin-orbit correlation strength between the [Co/Pt]<sub>3</sub> sample and the CoFeB/Gd/CoFeB sample, confirmed through theoretical calculations. Furthermore, the full magnetization switching of the [Co/Pt]<sub>3</sub> samples with a switching current density of approximately 2.6×10<sup>6 </sup>A/cm<sup>2</sup> has been realized through Zr, which even outperforms that of the W spin Hall material. Our finding provides a guideline to understand orbital torque efficiency and paves the way for developing energy-efficient orbitronic devices.

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Publication Details

Journal
Nature Communications
Published
2024-10-05
DOI
https://doi.org/10.1038/s41467-024-52824-2
Citations
41
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
13.84

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article

Orbital torque switching in perpendicularly magnetized materials

Wei Jiang, Xuepeng Qiu, Lujun Zhu, Yong Jiang et al.
41 citations
Nature Communications
Magnetic properties of thin films
13.84
article

Orbital torque switching in perpendicularly magnetized materials

Wei Jiang, Xuepeng Qiu, Lujun Zhu, Yong Jiang, Jiali Chen, Wenhong Wang, Yugui Yao, Yuhe R. Yang, Shuai Hu, Ping Wang, Yue Li, Cheng Chen, Ting Wang, Delin Zhang, Pan Chang, Wensi Yue
article en
41 citations

Abstract

The orbital Hall effect in light materials has attracted considerable attention for developing orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material, i.e., Zr. The orbital torque efficiency of approximately 0.78 is achieved in the Zr orbital Hall material with the perpendicularly magnetized [Co/Pt]<sub>3</sub> sample, which significantly surpasses that of the perpendicularly magnetized CoFeB/Gd/CoFeB sample (approximately 0.04). Such a notable difference is attributed to the different spin-orbit correlation strength between the [Co/Pt]<sub>3</sub> sample and the CoFeB/Gd/CoFeB sample, confirmed through theoretical calculations. Furthermore, the full magnetization switching of the [Co/Pt]<sub>3</sub> samples with a switching current density of approximately 2.6×10<sup>6 </sup>A/cm<sup>2</sup> has been realized through Zr, which even outperforms that of the W spin Hall material. Our finding provides a guideline to understand orbital torque efficiency and paves the way for developing energy-efficient orbitronic devices.

Nature CommunicationsVol. 15(1)
Tongji University (CN), Beijing Institute of Technology (CN), Tiangong University (CN), Beijing Institute of Optoelectronic Technology (CN), Shaanxi Normal University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 1%
Magnetic properties of thin films
13.84
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