Quantitative Evaluation of Carrier Dynamics in Blue Micro-LEDs: The Impact of Size and Current Density on Recombination and Injection Efficiency

In this work, we fabricated blue micro-LEDs of five different sizes to investigate the size-dependent carrier dynamics. To make the results more precise, micro-LEDs with integrated sensors were used to measure the real-time junction temperature and exclude the interference of temperature on the carrier dynamics. Utilizing the ABC model and the surface recombination model, we successfully calculated the surface recombination rates for devices of five sizes as well as the coefficients for bulk-SRH recombination, radiation recombination, and Auger recombination. We employed the calculated surface recombination rates to extrapolate the peak internal quantum efficiency (IQE) and the corresponding current densities across a range of device sizes. The calculation results show that as the device size decreases from 500 to 8 μm, peak IQE drops from 86.7 to 63.9%. This approach establishes a valuable method for assessing the recombination coefficients of micro-LEDs of different sizes and predicting their efficiency performance under various currents. This capability provides substantial guidance for optimizing micro-LEDs tailored to specific application scenarios. We also calculated the electron injection efficiency (ηEIE) under varying current densities from the experimental and fitted values. It can be found that under high current density, the ηEIE decays more severely as the device size decreases. We propose that this is because there are relatively more defects in the sidewalls of the electronic blocking layer and quantum barriers for smaller micro-LED, resulting in relatively more defected-aided electron leakage and a decrease in ηEIE.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2024-10-05
DOI
https://doi.org/10.1021/acsaelm.4c01464
Citations
5
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.55

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article

Quantitative Evaluation of Carrier Dynamics in Blue Micro-LEDs: The Impact of Size and Current Density on Recombination and Injection Efficiency

Yugang Zhou, Zexiang Liu, Hao Wang, Xiantao Jia et al.
5 citations
ACS Applied Electronic Materials
GaN-based semiconductor devices and materials
1.55
article

Quantitative Evaluation of Carrier Dynamics in Blue Micro-LEDs: The Impact of Size and Current Density on Recombination and Injection Efficiency

Yugang Zhou, Zexiang Liu, Hao Wang, Xiantao Jia, Tao Tao, Bin Liu, Rong Zhang, Youdou Zheng, Yan Guo
article en
5 citations

Abstract

In this work, we fabricated blue micro-LEDs of five different sizes to investigate the size-dependent carrier dynamics. To make the results more precise, micro-LEDs with integrated sensors were used to measure the real-time junction temperature and exclude the interference of temperature on the carrier dynamics. Utilizing the ABC model and the surface recombination model, we successfully calculated the surface recombination rates for devices of five sizes as well as the coefficients for bulk-SRH recombination, radiation recombination, and Auger recombination. We employed the calculated surface recombination rates to extrapolate the peak internal quantum efficiency (IQE) and the corresponding current densities across a range of device sizes. The calculation results show that as the device size decreases from 500 to 8 μm, peak IQE drops from 86.7 to 63.9%. This approach establishes a valuable method for assessing the recombination coefficients of micro-LEDs of different sizes and predicting their efficiency performance under various currents. This capability provides substantial guidance for optimizing micro-LEDs tailored to specific application scenarios. We also calculated the electron injection efficiency (ηEIE) under varying current densities from the experimental and fitted values. It can be found that under high current density, the ηEIE decays more severely as the device size decreases. We propose that this is because there are relatively more defects in the sidewalls of the electronic blocking layer and quantum barriers for smaller micro-LED, resulting in relatively more defected-aided electron leakage and a decrease in ηEIE.

ACS Applied Electronic MaterialsVol. 6(11)
Nanjing University (CN)
Priority Academic Program Development of Jiangsu Higher Education Institutions, Jiangsu Provincial Key Research and Development Program, Solid State Lighting and Energy-Savings Electronics Collaborative Innovation Center, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 17%
GaN-based semiconductor devices and materials
1.55
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