Carrier Doping in Semiconducting Carbon Nanotubes with Fluorosumanenes

This study investigates the interaction between semiconducting carbon nanotubes and fluorine-substituted sumanenes. Transfer characteristics of fluorosumanene-doped carbon nanotube thin-film transistors revealed shifts in threshold voltage depending on the type of fluorosumanene. The polarity and density of carrier doping induced by fluorosumanenes varied with the number of fluorine atoms. Density functional theory calculations on the graphene-fluorosumanene interface showed that the Dirac point shift, indicating carrier doping, was primarily determined by two types of dipole moments normal to the graphene surface, which are produced by the bowl-like structure of sumanene and by fluorine cites. Charge transfer doping was also suggested at the interface between semiconductor CNTs and a type of fluorosumanene with the lowest unoccupied level close to the carbon nanotube’s conduction band.

Authors

Institutions

Publication Details

Journal
The Journal of Physical Chemistry C
Published
2024-10-05
DOI
https://doi.org/10.1021/acs.jpcc.4c04543
Citations
1
Primary Topic
Carbon Nanotubes in Composites
Type
article
Field-Weighted Citation Impact
0.12

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Carrier Doping in Semiconducting Carbon Nanotubes with Fluorosumanenes

Hiromichi Kataura, Yanlin Gao, Susumu Okada, Haruki Uchiyama et al.
1 citations
The Journal of Physical Chemistry C
Carbon Nanotubes in Composites
0.12
article

Carrier Doping in Semiconducting Carbon Nanotubes with Fluorosumanenes

Hiromichi Kataura, Yanlin Gao, Susumu Okada, Haruki Uchiyama, Hidehiro Sakurai, Mina Maruyama, Yutaka Ohno, Takumi Nakano, Yumi Yakiyama
article en
1 citations

Abstract

This study investigates the interaction between semiconducting carbon nanotubes and fluorine-substituted sumanenes. Transfer characteristics of fluorosumanene-doped carbon nanotube thin-film transistors revealed shifts in threshold voltage depending on the type of fluorosumanene. The polarity and density of carrier doping induced by fluorosumanenes varied with the number of fluorine atoms. Density functional theory calculations on the graphene-fluorosumanene interface showed that the Dirac point shift, indicating carrier doping, was primarily determined by two types of dipole moments normal to the graphene surface, which are produced by the bowl-like structure of sumanene and by fluorine cites. Charge transfer doping was also suggested at the interface between semiconductor CNTs and a type of fluorosumanene with the lowest unoccupied level close to the carbon nanotube’s conduction band.

The Journal of Physical Chemistry CVol. 128(41)
University of Tsukuba (JP), Nagoya University (JP), National Institute of Advanced Industrial Science and Technology (JP), The University of Osaka (JP)
Japan Society for the Promotion of Science, Core Research for Evolutional Science and Technology
Openalex Percentile: Top 59%
Carbon Nanotubes in Composites
0.12
DOISourceOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Carrier Doping in Semiconducting Carbon Nanotubes with Fluorosumanenes — Hiromichi Kataura, Yanlin Gao, et al. · The Journal of Physical Chemistry C (2024) | TGRS Research Map | TGRS