Effect of Annealing Temperature on Structural And Optical Properties of Thin Films

SnO2 thin films were prepared by DC magnetron sputtering technique on glass substrates at 200 ℃ temperature. Both an X-ray diffractometer and a UV/VIS spectrophotometer were used to examine how the annealing temperature affected the structural and optical characteristics of the films. X-ray diffraction patterns indicated that the SnO2 films showed a polycrystalline tetragonal structure. The optical properties and dispersion parameters of the films have been studied over a wavelength (300-900) nm. A high optical energy-gap of 3.72 eV was achieved at temperature 400 ℃. Many optical parameters such as refractive index, dielectric constant, ratio of carrier concentration to the effective mass, single oscillator energy, dispersive energy, moments of the optical spectrum, the average operator strength, single operator wavelength, optical resistivity, thermal emission, and optical conductivity parameters were determined and examined in relation to the annealing temperature.

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Publication Details

Journal
journal of the college of basic education
Published
2024-10-04
DOI
https://doi.org/10.35950/cbej.v30i125.12096
Primary Topic
Semiconductor materials and interfaces
Type
article
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article

Effect of Annealing Temperature on Structural And Optical Properties of Thin Films

H. R. Shakir, Salah Kaduri Haza’a
journal of the college of basic education
Semiconductor materials and interfaces
article

Effect of Annealing Temperature on Structural And Optical Properties of Thin Films

H. R. Shakir, Salah Kaduri Haza’a
article en

Abstract

SnO2 thin films were prepared by DC magnetron sputtering technique on glass substrates at 200 ℃ temperature. Both an X-ray diffractometer and a UV/VIS spectrophotometer were used to examine how the annealing temperature affected the structural and optical characteristics of the films. X-ray diffraction patterns indicated that the SnO2 films showed a polycrystalline tetragonal structure. The optical properties and dispersion parameters of the films have been studied over a wavelength (300-900) nm. A high optical energy-gap of 3.72 eV was achieved at temperature 400 ℃. Many optical parameters such as refractive index, dielectric constant, ratio of carrier concentration to the effective mass, single oscillator energy, dispersive energy, moments of the optical spectrum, the average operator strength, single operator wavelength, optical resistivity, thermal emission, and optical conductivity parameters were determined and examined in relation to the annealing temperature.

journal of the college of basic educationVol. 30(125)
Openalex Percentile: Top 84%
Semiconductor materials and interfaces
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Effect of Annealing Temperature on Structural And Optical Properties of Thin Films — H. R. Shakir, Salah Kaduri Haza’a · journal of the college of basic education (2024) | TGRS Research Map | TGRS