Optimization of the melt and quench behavior of phase-change RF switch to improve power handling
This paper presents two methods to improve the reliability and the melting/quench behavior of phase change materials (PCM) used in radiofrequency (RF) switches. Results show benefits of the addition of an aluminum nitride heat spreading layer and the reduction of the distance between the substrate and the PCM. The reduction of the PCM cooling time shown in simulations and the power handling improvement observed in measurements on series structures support our proposed designs of GeTe based switches with RF gaps lengths over 4μm, allowing the power handling going to reach 31dBm in both ON and OFF states.
Authors
- J.F. Robillard (ORCID: https://orcid.org/0000-0002-7170-7535)
- Alain Fleury (ORCID: https://orcid.org/0009-0009-1016-7465)
- J. Lugo-Alvarez (ORCID: https://orcid.org/0000-0002-9748-4130)
- C. Héllion
- Emmanuel Dubois (ORCID: https://orcid.org/0000-0002-0347-010X)
- Bruno Reig (ORCID: https://orcid.org/0000-0002-2479-0217)
- M. Allain
- I. Charlet (ORCID: https://orcid.org/0000-0001-5668-442X)
- Corentin Mercier
- S. Monfray
- J. Denizart
- Vincent Puyal
- Frédéric Gianesello
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Lille (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- STMicroelectronics (France) (FR)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Université Polytechnique Hauts-de-France (FR)
- École Centrale de Lille (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732309
- Citations
- 1
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 0.12
Funders
- STMicroelectronics