INVESTIGATION OF VARIOUS MECHANISMS OF RADIATIVE RECOMBINATION OF SILICON NITRIDE AS AN EFFECTIVE WAY TO BROADENING THE PHOTOLUMINESCENCE SPECTRUM

The development of devices combining optical and electrical functions based on silicon-containing materials is one of the challenges in microelectronics. By plasma enhanced chemical vapor deposition synthesis and subsequent annealing, silicon nitride samples with both excess silicon and excess nitrogen were formed. The high concentration of Si-H and N-H bonds was determined by Raman spectroscopy in samples before annealing. By the transmission electron microscopy, it was determined that in addition to silicon nitride, silicon clusters were formed in the sample’s matrix. The photoluminescence spectra changed significantly for both types of samples during annealing in different gas atmospheres. Heat treatment of samples at 1100 °C after synthesis led to the disappearance of the PL spectrum, and after annealing at 800 °C, photoluminescence increases. It is noted that the highest intensity of photoluminescence was detected after annealing in the air atmosphere and the lowest in the nitrogen. The participation of N centers in recombination processes was confirmed by the method of electron paramagnetic resonance. The different mechanisms of particle interaction leading to photoluminescence and charge storage are considered. Thus, the conditions for the synthesis and annealing of silicon nitride layers are selected to obtain controlled luminescent properties in various spectral ranges.