The exchange interaction between neighboring quantum dots: physics and applications in quantum information processing

Abstract Electron spins confined in semiconductor quantum dots (QDs) are one of potential candidates for physical implementation of scalable quantum information processing technologies. Tunnel coupling based inter exchange interaction between QDs is crucial in achieving single-qubit manipulation, two-qubit gate, quantum communication and quantum simulation. This review first provides a theoretical perspective that surveys a general framework, including the Helter−London approach, the Hund−Mulliken approach, and the Hubbard model, to describe the inter exchange interactions between semiconductor quantum dots. An electrical method to control the inter exchange interaction in a realistic device is proposed as well. Then the significant achievements of inter exchange interaction in manipulating single qubits, achieving two-qubit gates, performing quantum communication and quantum simulation are reviewed. The last part is a summary of this review.

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Publication Details

Journal
Journal of Semiconductors
Published
2024-10-01
DOI
https://doi.org/10.1088/1674-4926/24050043
Citations
10
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
3.38
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article

The exchange interaction between neighboring quantum dots: physics and applications in quantum information processing

Zheng Gang Zhou, Zhiyuan Wu, Xinping Ma, Shaoyun Huang et al.
10 citations
Journal of Semiconductors
Quantum and electron transport phenomena
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article

The exchange interaction between neighboring quantum dots: physics and applications in quantum information processing

Zheng Gang Zhou, Zhiyuan Wu, Xinping Ma, Shaoyun Huang, Yixin Li, Shichang Fan
article en
10 citations

Abstract

Abstract Electron spins confined in semiconductor quantum dots (QDs) are one of potential candidates for physical implementation of scalable quantum information processing technologies. Tunnel coupling based inter exchange interaction between QDs is crucial in achieving single-qubit manipulation, two-qubit gate, quantum communication and quantum simulation. This review first provides a theoretical perspective that surveys a general framework, including the Helter−London approach, the Hund−Mulliken approach, and the Hubbard model, to describe the inter exchange interactions between semiconductor quantum dots. An electrical method to control the inter exchange interaction in a realistic device is proposed as well. Then the significant achievements of inter exchange interaction in manipulating single qubits, achieving two-qubit gates, performing quantum communication and quantum simulation are reviewed. The last part is a summary of this review.

Journal of SemiconductorsVol. 45(10)
Peking University (CN)
Openalex Percentile: Top 7%
Quantum and electron transport phenomena
3.38
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