Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL
Abstract Cryogenic oxide-confined vertical-cavity surface-emitting laser (VCSEL) has promising application in cryogenic optical interconnect for cryogenic computing. In this paper, we demonstrate a cryogenic 850-nm oxide-confined VCSEL at around 4 K. The cryogenic VCSEL with an optical oxide aperture of 6.5 μ m in diameter can operate in single fundamental mode with a side-mode suppression-ratio of 36 dB at 3.6 K, and the fiber-coupled output power reaches 1 mW at 5 mA. The small signal modulation measurements at 298 and 292 K show the fabricated VCSEL has the potential to achieve a high modulation bandwidth at cryogenic temperature.
Authors
- Chenxi Hao
- Lixing You (ORCID: https://orcid.org/0000-0001-7304-0474)
- Jingyu Huo
- Anjin Liu (ORCID: https://orcid.org/0000-0002-3442-9476)
- Bao Lin Tang
- Hailong Han
- Wanhua Zheng (ORCID: https://orcid.org/0000-0001-9158-6681)
- Minglu Wang
- Lingyun Li
Institutions
- Chinese Academy of Sciences (CN)
- EY Technologies (United States) (US)
- Shanghai Institute of Microsystem and Information Technology (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Journal of Semiconductors
- Published
- 2024-10-01
- DOI
- https://doi.org/10.1088/1674-4926/24070025
- Citations
- 5
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.04