Pulsed‐Laser Deposition of Ge‐Doped BiTe Nanofilms and Their Application in Room‐Temperature Long‐Wave Infrared Photodetection (Advanced Optical Materials 28/2024)
Pulsed-Laser Deposition of Ge-Doped BiTe Nanofilms for Photodetection Pulsed-laser deposition is developed for the large-area synthesis of Ge-doped BiTe nanofilms, which are successfully exploited for room-temperature high-speed long-wave infrared photodetection and optical communications. For more information on these achievements, see article number 2401937 by Jiandong Yao, Huanjun Chen, and co-workers.
Authors
- Jiandong Yao (ORCID: https://orcid.org/0000-0003-3499-2928)
- Huanjun Chen (ORCID: https://orcid.org/0000-0003-4699-009X)
- Guowei Yang (ORCID: https://orcid.org/0000-0003-2141-6630)
- Ximiao Wang
- Wan Wang (ORCID: https://orcid.org/0000-0002-9847-2887)
Institutions
- Sun Yat-sen University (CN)
Publication Details
- Journal
- Advanced Optical Materials
- Published
- 2024-10-01
- DOI
- https://doi.org/10.1002/adom.202470087
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00