Pulsed‐Laser Deposition of Ge‐Doped BiTe Nanofilms and Their Application in Room‐Temperature Long‐Wave Infrared Photodetection (Advanced Optical Materials 28/2024)

Pulsed-Laser Deposition of Ge-Doped BiTe Nanofilms for Photodetection Pulsed-laser deposition is developed for the large-area synthesis of Ge-doped BiTe nanofilms, which are successfully exploited for room-temperature high-speed long-wave infrared photodetection and optical communications. For more information on these achievements, see article number 2401937 by Jiandong Yao, Huanjun Chen, and co-workers.

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Publication Details

Journal
Advanced Optical Materials
Published
2024-10-01
DOI
https://doi.org/10.1002/adom.202470087
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Pulsed‐Laser Deposition of Ge‐Doped BiTe Nanofilms and Their Application in Room‐Temperature Long‐Wave Infrared Photodetection (Advanced Optical Materials 28/2024)

Jiandong Yao, Huanjun Chen, Guowei Yang, Ximiao Wang et al.
Advanced Optical Materials
Chalcogenide Semiconductor Thin Films
article

Pulsed‐Laser Deposition of Ge‐Doped BiTe Nanofilms and Their Application in Room‐Temperature Long‐Wave Infrared Photodetection (Advanced Optical Materials 28/2024)

Jiandong Yao, Huanjun Chen, Guowei Yang, Ximiao Wang, Wan Wang
article en

Abstract

Pulsed-Laser Deposition of Ge-Doped BiTe Nanofilms for Photodetection Pulsed-laser deposition is developed for the large-area synthesis of Ge-doped BiTe nanofilms, which are successfully exploited for room-temperature high-speed long-wave infrared photodetection and optical communications. For more information on these achievements, see article number 2401937 by Jiandong Yao, Huanjun Chen, and co-workers.

Advanced Optical MaterialsVol. 12(28)
Sun Yat-sen University (CN)
Openalex Percentile: Top 85%
Chalcogenide Semiconductor Thin Films
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