Influence of High-Power Near-Field Modulation Pulse Interference on IGBT Inverter Circuit
The reliability of Insulated Gate Bipolar Transistor (IGBT) significantly impacts the performance and efficiency of power conversion systems, making them crucial in industry and energy storage applications. With the ongoing trend towards higher power density in power conversion devices, IGBTs are increasingly vulnerable to interference from external sources during operation. This study investigates the high-power near-field modulation pulse magnetic field interference in the IGBT switching circuit during practical operation, with a focus on the impact of parasitic parameters on output waveform. Experimental verification under various interference conditions provides insight into actual interference effects.
Authors
- Jun Hu (ORCID: https://orcid.org/0000-0002-6771-1347)
- Jun Jie Yuan (ORCID: https://orcid.org/0000-0002-8265-0239)
- Hao Xie (ORCID: https://orcid.org/0000-0001-5981-1666)
Institutions
- City University (BD)
- Hangzhou City University
- Optica (US)
- Zhejiang University (CN)
Publication Details
- Published
- 2024-08-16
- DOI
- https://doi.org/10.1109/aces-china62474.2024.10699807
- Primary Topic
- Electromagnetic Compatibility and Noise Suppression
- Type
- article
- Field-Weighted Citation Impact
- 0.00