Multiphysics Modeling and Characterization of Resistive Random Access Memory Device
Multiphysics modeling and simulation of resistive random access memory (RRAM) device is presented in this paper. Three partial differential equations of physical fields are coupled and solved by finite element method. The breakage of conducting filaments and changes of Oxygen vacancy concentration in a metal oxide RRAM are analyzed.
Authors
- Shihao Ma (ORCID: https://orcid.org/0009-0000-3336-8248)
- Zhengwen Liao (ORCID: https://orcid.org/0009-0000-5736-7127)
- Ting Wan (ORCID: https://orcid.org/0000-0003-1486-5091)
- Shang Li
- Yuanzhi Qian
Institutions
- Nanjing University of Posts and Telecommunications (CN)
Publication Details
- Published
- 2024-08-16
- DOI
- https://doi.org/10.1109/aces-china62474.2024.10699697
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Jiangsu Province