A Single-Sideband Time Modulator with Extremely High Modulation Frequency in 130-nm CMOS

A single-sideband time modulator (SSBTM) with extremely high modulation frequency is presented, which realize a clean output spectrum within ± 1st-order sidebands. The proposed SSBTM uses active switches and high-pass filters in the mixing stage to significantly increase modulation frequency. Meanwhile, it uses particular-sized RF cells in the mixing stage to achieve impedance-invariant in status switching. The proposed SSBTM is designed in 130-nm CMOS process. The simulated result shows it achieves a modulation frequency up to 1 GHz, and unwanted sidebands harmonic components have been completely suppressed. The power consumption is 36 mW from a 1.2 V supply.