A 9-10 GHz High-Efficiency GaN HEMT High Power Amplifier MMIC
This paper presents a 9-10 GHz high-efficiency, and high-gain three-stage high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on 0.25-µm gallium nitride (GaN) high-electron mobility transistor (HEMT) process. The input and output impedances of the MMIC are both designed to match 50 ohms. Post EM simulation results show that this MMIC achieves a gain of more than 30 dB over the operating bandwidth, saturated output power P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</inf> better than 30 W, and a drain efficiency greater than 50%. The HPA MMIC layout measures 5 mm × 5 mm.
Authors
- Yang Gao (ORCID: https://orcid.org/0000-0002-3282-1618)
- Ming Yu (ORCID: https://orcid.org/0000-0002-9678-2347)
- Menghan Sun (ORCID: https://orcid.org/0000-0002-1737-9411)
- Ma Weiming (ORCID: https://orcid.org/0009-0007-9926-6536)
Institutions
- Xidian University (CN)
- Southern University of Science and Technology (CN)
- Zhengzhou University (CN)
- University of Hong Kong (HK)
Publication Details
- Published
- 2024-08-16
- DOI
- https://doi.org/10.1109/aces-china62474.2024.10699670
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00