Miniatured and High-density 3D Solenoid Inductor Based on TSV Arrays
By using the through-silicon via (TSV) to interconnect the stacked layers vertically, three-dimensional integrated circuits (3D ICs) offer performance improvements in RF/microwave applications with reduced footprints and shortened wiring. In this work, a high-density 3D solenoid inductor based on TSV arrays is proposed. And the mathematical analysis model of the proposed inductor is established. Finally, by comparing with the structures proposed by other researches, a higher inductance density of 379.6nH/mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is observed in the proposed configuration while maintaining a good quality factor and a miniatured chip size. The performance superiority of the proposed inductor is demonstrated.
Authors
- Xiangkun Yin (ORCID: https://orcid.org/0000-0003-2318-1257)
- Xiangyu Ma (ORCID: https://orcid.org/0000-0002-9185-4487)
- Tianhui Zhao
- Siquan Lyu
- Nairong Liu
Institutions
- Xidian University (CN)
Publication Details
- Published
- 2024-08-16
- DOI
- https://doi.org/10.1109/aces-china62474.2024.10699990
- Citations
- 2
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China
- Fundamental Research Funds for the Central Universities
- Research and Development