Measurement-based Transistor Modeling and Evaluation
In order to construct more accurate model for transistor, the measurement-based transistor modeling from I-V and C-V/Q-V characteristics are analyzed in detail.. Moreover, a novel method of radar chart is employed to evaluate the widely used models. Thus, the challenges and prospects on future transistor modeling is addressed.
Authors
- Qian Lin (ORCID: https://orcid.org/0000-0002-7466-7313)
- Shu‐Yue Yang
Institutions
- Qinghai University (CN)
Publication Details
- Published
- 2024-08-16
- DOI
- https://doi.org/10.1109/aces-china62474.2024.10699717
- Primary Topic
- VLSI and Analog Circuit Testing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Chinese Academy of Sciences