Thermal Transient Response of SOI LDMOSFET Under Electromagnetic Interference

With the development of communication technology, electromagnetic signals in the environment are becoming more and more complex, and many circuits and systems will fail due to external electromagnetic interference. This study conducts an analysis on the Silicon-On-Insulator Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor (SOI LDMOSFET) under electromagnetic interference by using finite element method to solve drift-diffusion equations and the Fourier heat conduction equation. Our in-house developed algorithms are capable to get temperature response of SOI LDMOSFET under electromagnetic pulse. The simulation results are of significance in understanding the reliability of RF power devices.