Growth of water-insoluble rutile GeO<sub>2</sub> thin films on (001) TiO<sub>2</sub> substrates with graded Ge<sub> x </sub>Sn<sub>1−x </sub>O<sub>2</sub> buffer layers
Abstract Rutile GeO 2 (r-GeO 2 ) is an ultrawide bandgap semiconductor with the potential for ambipolar doping and bulk single-crystal growth. In this study, we investigated r-GeO 2 thin films grown on (001) TiO 2 substrates with graded Ge x Sn 1− x O 2 buffer layers. GeO 2 grown on bare TiO 2 substrates via mist chemical vapor deposition exhibited water-soluble amorphous and/or α-quartz phases alongside the rutile phase. In contrast, the insertion of graded Ge x Sn 1− x O 2 buffer layers on the TiO 2 substrate allowed the growth of single-phase water-insoluble r-GeO 2 thin films. This study contributes to the development of water-insoluble r-GeO 2 thin films for various applications.
Authors
- Kazuki Shimazoe (ORCID: https://orcid.org/0000-0001-7710-0411)
- Temma Ogawa
- Hiroyuki Nishinaka (ORCID: https://orcid.org/0000-0003-1878-0765)
Institutions
- Kyoto Institute of Technology (JP)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2024-10-01
- DOI
- https://doi.org/10.35848/1882-0786/ad838e
- Citations
- 18
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 2.12
Funders
- Japan Society for the Promotion of Science
- Fusion Oriented REsearch for disruptive Science and Technology