Enhance the Performance of CZTSSe Solar Cells Through Inhibiting the Cu<sup>2+</sup>, Tu, and (─COOH) Association Reaction
The Sol-gel precursor solution reaction mechanism has a significant impact on the Cu<sub>2</sub>ZnSn(S, Se)<sub>4</sub> (CZTSSe) solar cells. It is discovered that in the Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) precursor solution (CZTS-PS) in the preparation, there is an association reaction among Cu<sup>2+</sup>, thiourea (Tu), and carboxyl (-COOH), which is an important reason for the undesirable CZTSSe solar cells. The strong association reaction generates excessive Cu<sup>2+</sup> ions, forming the Cu<sub>x</sub>Se secondary phase on the surface of the CZTSSe absorber. The secondary phase causes a short circuit and deterioration of gadget performance. Following a 6-h aging period for the CZTS-PS, the average photoelectric conversion efficiency (PCE) of the device is enhanced to 8.02%, and there is also an improvement in device uniformity, as evidenced by a decrease in the standard deviation to less than 1. To inhibit the association reaction and eliminate the aging time phenomenon, a strategy is developed using hydrochloric acid to regulate the CZTS-PS environment. This strategy shifts the REDOX reaction in Cu<sup>2+</sup>+Sn<sup>2+</sup> toward the formation of Cu<sup>1+</sup>+Sn<sup>4+</sup>, leading to a decrease in the defect concentrations of V<sub>Sn</sub>(-/0) and Cu<sub>Sn</sub>(-/0), which increases the carrier concentration and reduces the impact of band tailing. The average power conversion efficiency (PCE) of the devices improved from 7.45% to 9.26%, the PCE of the best-performing CZTSSe solar cells increased from 9.25% to 9.83%, and the consistency among the devices is further enhanced, as indicated by a reduction in the standard deviation from 0.98 to 0.44. Ultimately, the device performance of the Cu<sup>2+</sup>+Sn<sup>2+</sup>-DMF system improved by 11.01% (without the MgF<sub>2</sub> layer) after optimization. This study serves as a reference for regulating the environment of the CZTS-PS to further enhance the CZTSSe devices' performance, and the photoelectric conversion efficiency is improved by ≈30%.
Authors
- Chengjun Zhu (ORCID: https://orcid.org/0000-0002-6430-2142)
- Hongmei Luan (ORCID: https://orcid.org/0009-0007-7565-2803)
- Ruijian Liu (ORCID: https://orcid.org/0000-0001-5541-1913)
- Lei Wang (ORCID: https://orcid.org/0000-0001-7275-4846)
- Letu Siqin
- Wenjing Xin
- Yiming Wang
- Shuyu Li (ORCID: https://orcid.org/0000-0001-9662-1212)
- Jingyuan Guo (ORCID: https://orcid.org/0000-0002-7915-6088)
Institutions
- Inner Mongolia University (CN)
- Inner Mongolia University of Technology (CN)
Publication Details
- Journal
- Small
- Published
- 2024-10-02
- DOI
- https://doi.org/10.1002/smll.202405908
- Citations
- 5
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Natural Science Foundation of China