Growth, Thermal, and Spectroscopic Properties of Er<sup>3+</sup>-Doped Ca<sub>9</sub>Yb(VO<sub>4</sub>)<sub>3</sub>(PO<sub>4</sub>)<sub>4</sub> Crystal for 1.55 μm Laser

A Ca9Yb(VO4)3(PO4)4 crystal doped with (4.5 at. %) Er3+ was grown by the Czochralski method. A comprehensive investigation of the thermal and spectroscopic properties was conducted. The average thermal expansion coefficients of the crystal are 11.2 and 16.9 × 10–6 K–1 along the crystallographic a and c axes, respectively. Additionally, the thermal conductivities of the crystal along a and c axes are both about 1.2 W m–1 K–1 at room temperature and increase to 1.43 and 1.37 W m–1 K–1 at 400 °C, respectively. For σ polarization, the crystal exhibits a maximum absorption cross section of 1.76 × 10–20 cm2 at a wavelength of 980 nm and a maximum emission cross section of 0.78 × 10–20 cm2 at 1533 nm. The fluorescence lifetime of the upper laser level 4I13/2 is 4.68 ms, while the Yb3+→Er3+ energy transfer efficiency is approximately 63.9%. The full widths at half-maximum of the emission bands around 1.55 μm are measured to be 34 nm for σ polarization and 52 nm for π polarization. Combining a large σ-polarized absorption coefficient of 27.4 cm–1 at a wavelength of 980 nm as well as a wide emission band, the Er:Ca9Yb(VO4)3(PO4)4 crystal has the potential to serve as a microchip gain medium for broadband-tunable and ultrashort-pulse lasers operating at 1.55 μm.

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Journal
Crystal Growth & Design
Published
2024-10-03
DOI
https://doi.org/10.1021/acs.cgd.4c01117
Primary Topic
Solid State Laser Technologies
Type
article
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article

Growth, Thermal, and Spectroscopic Properties of Er3+-Doped Ca9Yb(VO4)3(PO4)4 Crystal for 1.55 μm Laser

Lincong Rao, Yidong Huang, Jianhua Huang, Yanfu Lin et al.
Crystal Growth & Design
Solid State Laser Technologies
article

Growth, Thermal, and Spectroscopic Properties of Er3+-Doped Ca9Yb(VO4)3(PO4)4 Crystal for 1.55 μm Laser

Lincong Rao, Yidong Huang, Jianhua Huang, Yanfu Lin, Yujin Chen, Xinghong Gong
article en

Abstract

A Ca9Yb(VO4)3(PO4)4 crystal doped with (4.5 at. %) Er3+ was grown by the Czochralski method. A comprehensive investigation of the thermal and spectroscopic properties was conducted. The average thermal expansion coefficients of the crystal are 11.2 and 16.9 × 10–6 K–1 along the crystallographic a and c axes, respectively. Additionally, the thermal conductivities of the crystal along a and c axes are both about 1.2 W m–1 K–1 at room temperature and increase to 1.43 and 1.37 W m–1 K–1 at 400 °C, respectively. For σ polarization, the crystal exhibits a maximum absorption cross section of 1.76 × 10–20 cm2 at a wavelength of 980 nm and a maximum emission cross section of 0.78 × 10–20 cm2 at 1533 nm. The fluorescence lifetime of the upper laser level 4I13/2 is 4.68 ms, while the Yb3+→Er3+ energy transfer efficiency is approximately 63.9%. The full widths at half-maximum of the emission bands around 1.55 μm are measured to be 34 nm for σ polarization and 52 nm for π polarization. Combining a large σ-polarized absorption coefficient of 27.4 cm–1 at a wavelength of 980 nm as well as a wide emission band, the Er:Ca9Yb(VO4)3(PO4)4 crystal has the potential to serve as a microchip gain medium for broadband-tunable and ultrashort-pulse lasers operating at 1.55 μm.

Crystal Growth & Design
Quanzhou Normal University (CN), Chinese Academy of Sciences (CN), Fujian Institute of Research on the Structure of Matter (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Natural Science Foundation of Fujian Province, Quanzhou Normal University
Openalex Percentile: Top 85%
Solid State Laser Technologies
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