Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> Thickness-Dependent Transfer Characteristics of In<sub><i>x</i></sub>Zn<sub>1–<i>x</i></sub>O<sub><i>y</i></sub> Channel Ferroelectric FETs

We investigate how the threshold voltage (<i>V</i><sub>T</sub>) is adjusted to create a memory window (MW) in ferroelectric field-effect transistors (FeFETs) composed of ferroelectric Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> and InZnO (In<sub>2</sub>O<sub>3</sub>:ZnO = 9:1 wt %). Temperature-dependent polarization measurements reveal a dipole switching in Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub>. The properties of the n-type InZnO channel are examined by fabricating an oxide transistor with an HfO<sub>2</sub> gate dielectric. Upon replacement of HfO<sub>2</sub> with Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> in the oxide transistor, a counterclockwise MW is observed. Specifically, as the Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> thickness increases from 16 to 24 nm, the <i>V</i><sub>T</sub> of the FeFET after a + gate voltage (<i>V</i><sub>G</sub>) sweep remains nearly constant, while the <i>V</i><sub>T</sub> after a -<i>V</i><sub>G</sub> sweep shifts significantly from -0.9 to 0.5 V. The enlarged MW of approximately 2 V, which is proportional to the Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> thickness in the FeFET, can be explained by considering the balance between <i>V</i><sub>G</sub> controllability across the gate stack and the ferroelectric switching of Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub>.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2024-10-03
DOI
https://doi.org/10.1021/acs.jpclett.4c02201
Citations
2
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.42

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article

Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of InxZn1–xOy Channel Ferroelectric FETs

Yunsur Kim, Hyeonsik Choi, Seonuk Jeon, J.S. Kim et al.
2 citations
The Journal of Physical Chemistry Letters
Ferroelectric and Negative Capacitance Devices
0.42
article

Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of InxZn1–xOy Channel Ferroelectric FETs

Yunsur Kim, Hyeonsik Choi, Seonuk Jeon, J.S. Kim, Jiyong Woo, Eunjin Kim, Hyoungjin Park, Jiae Jeong, Hojin Moon
article en
2 citations

Abstract

We investigate how the threshold voltage (<i>V</i><sub>T</sub>) is adjusted to create a memory window (MW) in ferroelectric field-effect transistors (FeFETs) composed of ferroelectric Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> and InZnO (In<sub>2</sub>O<sub>3</sub>:ZnO = 9:1 wt %). Temperature-dependent polarization measurements reveal a dipole switching in Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub>. The properties of the n-type InZnO channel are examined by fabricating an oxide transistor with an HfO<sub>2</sub> gate dielectric. Upon replacement of HfO<sub>2</sub> with Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> in the oxide transistor, a counterclockwise MW is observed. Specifically, as the Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> thickness increases from 16 to 24 nm, the <i>V</i><sub>T</sub> of the FeFET after a + gate voltage (<i>V</i><sub>G</sub>) sweep remains nearly constant, while the <i>V</i><sub>T</sub> after a -<i>V</i><sub>G</sub> sweep shifts significantly from -0.9 to 0.5 V. The enlarged MW of approximately 2 V, which is proportional to the Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> thickness in the FeFET, can be explained by considering the balance between <i>V</i><sub>G</sub> controllability across the gate stack and the ferroelectric switching of Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub>.

The Journal of Physical Chemistry LettersVol. 15(40)
Kyungpook National University (KR)
Ministry of Trade, Industry and Energy, Ministry of Science and ICT, South Korea
Openalex Percentile: Top 38%
Ferroelectric and Negative Capacitance Devices
0.42
DOISourceOpenAlex
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