Design of photonic crystals for nanokelvin-resolution thermometry

High-resolution thermometry is key for the development of calorimeters, bolometers, and high-stability light sources, as well as for probing dissipation and transport in microelectronics and quantum devices. Achieving nanokelvin-level temperature resolution at room temperature requires using large optical cavities, which are unsuitable for microscale integration. Here we computationally design a one-dimensional photonic crystal Band Edge Thermometer that achieves significant temperature sensitivity by combining: (i) the abrupt variation in optical properties of a direct bandgap semiconductor at the band edge, and (ii) a large quality factor in a resonant photonic structure. Two devices are designed which are constructed from GaAs/AlAs and GaN/AlN multilayer structures. The optimal sensor design features an extremely large thermoreflectance coefficient of 60.6 K −1 and a thermal time constant of 1.1 µs, with a sensor thickness of only 6.7 µm. The projected thermometry noise floor is 84 nK.Hz -½ for the GaAs/AlAs sensor and 35 nK.Hz -½ for the GaN/AlN sensor. The designed sensor architecture is expected to enable a broad range of applications in microcalorimetry and bolometry where a high temperature resolution combined with microscale sensor footprint is required. • Band-edge photonic crystals are designed for non-contact reflectance thermometry. • Photonic crystals use a thin film of direct-bandgap semiconductor as the cavity. • At resonant wavelength a thermoreflectance coefficient of up to 60 K −1 was achieved. • The best sensor design achieved a theoretical thermometry noise floor of 35 nK/√Hz. • Photonic sensors have a thickness of <10 µm and can be integrated on microdevices.