A 2 THz Room Temperature Bias-Able Schottky Mixer
We report on the design, fabrication, and characterization of a fully solid-state room-temperature compact heterodyne receiver front-end working at 1.90–2.06 THz with 4000K–6000K double side band equivalent noise temperature. The receiver front-end is based on a novel gallium arsenide (GaAs) Schottky subharmonic mixer featuring a bias-able antiparallel pair of diodes monolithically integrated on a thin GaAs membrane and a frequency multiplier chain at 1.03 THz that produces ∼1.5 mW of power. This mixer topology provides inherent benefits, such as ability to balance the two diodes and robustness vis-à-vis waveguide dimensions and packaging. The room-temperature sensitivity of this heterodyne receiver sets a new milestone for Schottky receivers and opens the possibility for resolving the emission of atomic oxygen in Earth's atmosphere.
Authors
- José V. Siles (ORCID: https://orcid.org/0000-0002-4207-9517)
- Choonsup Lee (ORCID: https://orcid.org/0000-0003-0869-3510)
- Imran Mehdi (ORCID: https://orcid.org/0000-0002-5213-4890)
- R. Lin
- A. Maestrini
Institutions
- Jet Propulsion Laboratory (US)
Publication Details
- Journal
- IEEE Transactions on Terahertz Science and Technology
- Published
- 2024-10-03
- DOI
- https://doi.org/10.1109/tthz.2024.3472294
- Citations
- 5
- Primary Topic
- Superconducting and THz Device Technology
- Type
- article
- Field-Weighted Citation Impact
- 1.66