Excellent Reliability in Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Device With Oxygen-Doped ITO Electrodes

Hafnium-based ferroelectric memory has become an attractive candidate for next-generation storage technology due to its high write/read speed and low power consumption. In this letter, a highly reliable ferroelectric memory device based on zirconium-doped hafnium oxide (HZO) using oxide (indium tin oxide) electrodes is proposed. The devices have excellent ferroelectric properties with an initial remnant polarization (2P<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text {r}}$ </tex-math></inline-formula>) up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$53.8~\mu $ </tex-math></inline-formula>C/cm2. It also demonstrates great endurance, maintaining 2P<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text {r}} \gt 33~\mu $ </tex-math></inline-formula>C/cm2 even after <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{12}}$ </tex-math></inline-formula> cycles, and shows exceptional reliability at both high and low frequencies. This study provides important insights into the fatigue phenomenon and an effective strategy for the development of reliable hafnium-based ferroelectric devices.