InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer
High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga0.51As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of ∼2.1 μm and ∼2.6 μm, respectively. At a bias voltage of −100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 μm, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 × 1010 cm·Hz1/2/W (at a peak responsivity of 2.1 μm) under −100 mV applied bias at 300 K.
Authors
- Yifan Shan
- Faran Chang
- Chuanbo Li (ORCID: https://orcid.org/0000-0002-8301-0559)
- Yi Shi (ORCID: https://orcid.org/0000-0002-1082-0315)
- Nong Li (ORCID: https://orcid.org/0000-0002-4945-392X)
- Yingqiang Xu
- Ye Zhang (ORCID: https://orcid.org/0009-0001-7723-4986)
- Chengao Yang (ORCID: https://orcid.org/0000-0003-4426-6807)
- Xiangyu Zhang (ORCID: https://orcid.org/0000-0002-4858-5429)
- Hongyue Hao
- Fan Ye (ORCID: https://orcid.org/0000-0002-4686-8652)
- Yan Liang (ORCID: https://orcid.org/0009-0006-8061-1769)
- Donghai Wu (ORCID: https://orcid.org/0000-0003-0327-0332)
- Dongwei Jiang (ORCID: https://orcid.org/0000-0002-7225-9922)
- Youdou Zheng
- Xiangbin Su (ORCID: https://orcid.org/0000-0002-5342-6836)
- Guo Wei Wang (ORCID: https://orcid.org/0000-0002-8416-4082)
- Zhichuan Niu (ORCID: https://orcid.org/0000-0002-9566-6635)
- Haiqiao Ni
- Wenguang Zhou (ORCID: https://orcid.org/0009-0002-9819-348X)
Institutions
- Minzu University of China (CN)
- Chinese Academy of Sciences (CN)
- Harbin Institute of Technology (CN)
- Institute of Semiconductors (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-09-30
- DOI
- https://doi.org/10.1063/5.0223557
- Citations
- 8
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 1.67
Funders
- Key Technologies Research and Development Program