Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM
We developed a color-modulated light-emitting device (LED) by the integration of a p-GaN/n-ZnO heterojunction with reliable resistive random access memory (RRAM) and demonstrated a multi-function integrated device with the adjustable electroluminescence (EL) color by modulating the injection current according to the multiple resistance states. As a critical foundation of an integrated device, reliable operation was achieved by introducing an AlOx layer into HfOx RRAM as an adjustment of the resistive switching endurance. Eventually, the EL color of LED was effectively regulated by modulating the compliance current of RRAM. Thanks to the high uniformity, this modulated LED may be a promising candidate for the application of low-cost and high-density LED displays without complicated structures and techniques, and it can provide a feasible approach for the realization of multilevel resistance state feedback from varied EL color in the future.
Authors
- Su‐Ting Han (ORCID: https://orcid.org/0000-0003-3392-7569)
- Runze Xu
- Ziyu Lv (ORCID: https://orcid.org/0000-0002-7062-3647)
- Liu Yang (ORCID: https://orcid.org/0000-0001-8288-5639)
- Ye Bo Zhou (ORCID: https://orcid.org/0000-0002-0273-007X)
- Tao Sun (ORCID: https://orcid.org/0009-0000-9922-5418)
- Meng Qi
Institutions
- Shenyang Aerospace University (CN)
- Hong Kong Polytechnic University (HK)
- Shenzhen University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-09-30
- DOI
- https://doi.org/10.1063/5.0226980
- Citations
- 1
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Guangdong Science and Technology Department
- Data Center of Management Science, National Natural Science Foundation of China - Peking University