Two-in-one functionality in a 28 × 28 β-Ga₂O₃ array: bias-voltage switching between photodetection and neuromorphic vision

Due to the differences in photoresponse characteristics between photodetectors and neuromorphic vision sensors (NVS), simultaneously achieving these two powerful functionalities on a single device poses significant challenges. Here, we demonstrate a two-in-one platform based on a 28 × 28 β-Ga₂O₃ array that seamlessly switches between photodetector and NVS modes via bias voltage control. By exploiting the differential carrier capture dynamics of deep-level oxygen vacancies in Ga₂O₃, our device exhibits conventional photoconductivity at low voltages and persistent photoconductivity at high voltages. This enables high-quality optoelectronic imaging as well as excellent image sensing, memory, and neuromorphic visual preprocessing capabilities within a single integrated platform. This work paves the way for multifunctional Ga₂O₃ optoelectronic devices with applications in integrated sensing and computing.