High-<i>Q</i> all-dielectric metasurface perfect absorber powered by quasi-bound states in the continuum

All-dielectric perfect absorbers powered by quasi-bound states in the continuum (-BIC) are of great importance for developing high-performance optoelectronic devices because they provide high Q-factor absorption. However, these structures usually require the addition of metal back reflectors or degenerate critical coupling to achieve high absorption, which often introduces problems such as Joule heat output and sensitivity to geometrical parameters. In this work, we present an all-dielectric high Q-factor metasurface perfect absorber (MPA) with a cell structure consisting of split Si elliptical disks. By adjusting the tilt angle of the gap, the metasurface can excite a single quasi-BIC resonance in a highly reflective background, corresponding to the electric quadrupole (EQ) mode. Due to the asymmetric coupling of the EQ mode, the proposed metasurface easily breaks the 50% absorption limit. At the wavelength of 894.645 nm, the metasurface achieves a perfect absorption of more than 99% and has a Q-factor of up to 1955. In addition, the structure shows excellent tolerance to geometrical parameters while ensuring high absorption performance. By adjusting the polarization angle, we have also achieved an arbitrary tuning of the absorption efficiency without frequency shift. This work provides a viable scheme for the design of tunable, large-tolerance, and high-Q all-dielectric MPAs, which have a broad potential application in the fields of optical filtering, optical switching, and polarization detection.