Pseudo-source gated beta-gallium oxide MOSFET
This study demonstrates pseudo-source-gated beta-gallium oxide (β-Ga2O3) metal oxide semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated transistor (pseudo-SGT) architecture has a thin (∼11 nm) recessed channel design, effectively emulating conventional SGT characteristics without significantly compromising on-current. The fabricated devices exhibit remarkable intrinsic gain of 104, low output conductance of 10−8 S/mm, transconductance of 10−3 S/mm, and drain saturation voltage of ∼1.5 V, while maintaining a drain current of 1.3 mA/mm. These enhanced performance metrics significantly expand the potential of β-Ga2O3 MOSFETs for the development of Ga2O3 monolithic power integrated circuits.
Authors
- Dhanu Chettri (ORCID: https://orcid.org/0000-0002-3681-5952)
- Ganesh Mainali (ORCID: https://orcid.org/0009-0005-9850-4999)
- Na Xiao (ORCID: https://orcid.org/0000-0002-2614-434X)
- Xiao Tang (ORCID: https://orcid.org/0000-0002-0138-7206)
- Vishal Khandelwal (ORCID: https://orcid.org/0000-0003-1759-1209)
- Jose Manuel Taboada Vasquez (ORCID: https://orcid.org/0000-0003-1710-2348)
- Mritunjay Kumar (ORCID: https://orcid.org/0000-0003-3677-182X)
- Glen Isaac Maciel García (ORCID: https://orcid.org/0000-0002-2574-0545)
- Zhiyuan Liu (ORCID: https://orcid.org/0000-0002-8690-2069)
- Xiaohang Li (ORCID: https://orcid.org/0000-0002-4434-365X)
Institutions
- King Abdullah University of Science and Technology (SA)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-09-30
- DOI
- https://doi.org/10.1063/5.0231763
- Citations
- 5
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.59
Funders
- King Abdullah University of Science and Technology